Chemical vapor deposition of W-Si-N and W-B-N

Details Chemical vapor deposition of W-Si-N and W-B-N Chemical vapor deposition of W-Si-N and W-B-N

1996-10-01

1999-06-29

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

427255, 4272551, C23C 1608

Patent

active

059166347

ABSTRACT:
A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

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