Chemical vapor deposition of transistion metals

Details Chemical vapor deposition of transistion metals Chemical vapor deposition of transistion metals

1988-06-22

1991-02-12

Bell, Janyce

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427226, 427229, 4272553, 427314, 556 1, 556 43, 556 58, 556136, 556140, C23C 1600, C07F 1100, C07F 1700

Patent

active

049923056

ABSTRACT:
Coatings of Group IIA metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## wherein M is a transition metal of Group VB, VIB, VIIB or VIII, R.sub.1 is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, R.sub.2 is a hydrogen or lower alkyl or alkenyl radical, n is the valence of M and is an integer from 2 to 4, and p is an integer from 0 to (n-1), is contacted with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as manganese telluride can be deposited from a manganese compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.

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