Chemical vapor deposition of titanium and titanium containing fi

Details Chemical vapor deposition of titanium and titanium containing fi Chemical vapor deposition of titanium and titanium containing fi

1993-03-24

1993-12-28

King, Roy

Coating processes

Coating by vapor, gas, or smoke

Metal coating

4272551, 4272552, 427255, 4272481, 427314, 427124, 4271261, C23C 1600

Patent

active

052737837

ABSTRACT:
A process is disclosed for creating highly-conformal titanium-containing films via chemical vapor deposition using bis(2,4-dimethylpentadienyl) titanium, an analog thereof, or a Lewis-base-stabilized form thereof, as a precursor. The deposition process takes place in a low-pressure chamber. A substrate within the chamber, and on which the film is to be deposited, is heated to a temperature within a range of about 300-600.degree. C. In one embodiment of the invention, titanium precursor compound vapor is admitted to the chamber either solely or in combination with one or more carrier gases. In another embodiment, titanium precursor compound vapor in combination with one or more carrier gases and/or other vapor phase reactants are admitted to the chamber.

REFERENCES:
patent: 5130172 (1992-07-01), Hicks et al.
patent: 5192589 (1993-03-01), Sandhu
"Bis(2,4-dimethylpentadienyl) Complexes of the Transition Metals" D. R. Wilson, L. Stahl, and R. D. Earnst, Organometall. Synth. vol. 3, p.136-141 (1986).
Journal of Organometallic Chemistry vol. 250 (1983) p. 257-263 "Carbonyl and Trifluorophosphine Adducts of Bis(2,4-Dimethylpentadienyl)Titanium and Bis (2,4-Dimethylpentadienyl)Vanadium", Richard D. Earnst Ju-Zheng Liu and David R. Wilson.
Bis(2,4-dimethylpentadienyl)titanium: An "Open Titanocene", Ju-Zheng Liu and Richard D. Ernst, J. Am. Chem. Soc., vol. 104, p. 3733-3739 (1982).

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