Chemical vapor deposition of titanium

Details Chemical vapor deposition of titanium Chemical vapor deposition of titanium

2005-06-07

2005-06-07

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S296000, C257S750000, C257S763000

Reexamination Certificate

active

06903462

ABSTRACT:
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.

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