Chemical vapor deposition of titanium

Details Chemical vapor deposition of titanium Chemical vapor deposition of titanium

1998-02-25

2000-11-07

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

427 99, 427124, 427250, 427253, 42725517, 42725518, 42725527, 42725528, 4273766, 4274197, 438763, C23C 16455, B05D 136, B05D 302

Patent

active

061433624

ABSTRACT:
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.

REFERENCES:
patent: 4340617 (1982-07-01), Deutsch et al.
patent: 4343870 (1982-08-01), Heller et al.
patent: 4359490 (1982-11-01), Lehrer
patent: 4713258 (1987-12-01), Umemura
patent: 4721631 (1988-01-01), Endo et al.
patent: 4751101 (1988-06-01), Joshi
patent: 4868005 (1989-09-01), Ehrlich et al.
patent: 4876112 (1989-10-01), Kaito et al.
patent: 4923717 (1990-05-01), Gladfelter et al.
patent: 4957777 (1990-09-01), Ilderem et al.
patent: 4971655 (1990-11-01), Stefano et al.
patent: 5005519 (1991-04-01), Egermeier et al.
patent: 5015330 (1991-05-01), Okumura et al.
patent: 5022905 (1991-06-01), Grundy et al.
patent: 5032233 (1991-07-01), Yu et al.
patent: 5049975 (1991-09-01), Ajika et al.
patent: 5124780 (1992-06-01), Sandhu et al.
patent: 5136362 (1992-08-01), Grief et al.
patent: 5147819 (1992-09-01), Yu et al.
patent: 5173327 (1992-12-01), Sandhu et al.
patent: 5192589 (1993-03-01), Sandhu
patent: 5196360 (1993-03-01), Doan et al.
patent: 5202579 (1993-04-01), Fujii et al.
patent: 5227331 (1993-07-01), Westmoreland
patent: 5227334 (1993-07-01), Sandhu
patent: 5232873 (1993-08-01), Geva et al.
patent: 5240739 (1993-08-01), Doan et al.
patent: 5246881 (1993-09-01), Sandhu et al.
patent: 5252518 (1993-10-01), Sandhu et al.
patent: 5254499 (1993-10-01), Sandhu et al.
patent: 5258096 (1993-11-01), Sandhu et al.
patent: 5273783 (1993-12-01), Wanner
patent: 5275715 (1994-01-01), Tuttle
patent: 5278100 (1994-01-01), Doan et al.
patent: 5306951 (1994-04-01), Lee et al.
patent: 5320880 (1994-06-01), Sandhu et al.
patent: 5341016 (1994-08-01), Prall et al.
patent: 5344792 (1994-09-01), Sandhu et al.
patent: 5374591 (1994-12-01), Hasegawa et al.
patent: 5376405 (1994-12-01), Doan et al.
patent: 5381302 (1995-01-01), Sandhu et al.
patent: 5384284 (1995-01-01), Doan et al.
patent: 5384289 (1995-01-01), Westmoreland
patent: 5391410 (1995-02-01), Nii et al.
patent: 5393564 (1995-02-01), Westmoreland et al.
patent: 5399379 (1995-03-01), Sandhu
patent: 5416045 (1995-05-01), Kauffman et al.
patent: 5425392 (1995-06-01), Thakur et al.
patent: 5453640 (1995-09-01), Kinoshita
patent: 5459353 (1995-10-01), Kanazawa
patent: 5496762 (1996-03-01), Sandhu et al.
patent: 5506166 (1996-04-01), Sandhu et al.
patent: 5508066 (1996-04-01), Akahori
patent: 5567243 (1996-10-01), Foster et al.
patent: 5571572 (1996-11-01), Sandhu
patent: 5575708 (1996-11-01), Chau et al.
patent: 5595784 (1997-01-01), Kaim et al.
patent: 5607722 (1997-03-01), Vaartstra et al.
patent: 5633200 (1997-05-01), Hu
patent: 5641545 (1997-06-01), Sandhu
patent: 5644166 (1997-07-01), Honeycutt et al.
patent: 5693557 (1997-12-01), Hirao et al.
patent: 5747116 (1998-05-01), Sharan et al.
patent: 5773890 (1998-06-01), Uchiyama et al.
patent: 5828131 (1998-10-01), Cabral, Jr. et al.
patent: 5834371 (1998-11-01), Ameen et al.
patent: 5956595 (1999-09-01), Zenke
patent: 5973402 (1999-10-01), Shinriki et al.
Bouteville, A., et al., "TiSi2 Selective Growth in a rapid thermal low pressure chemical vapor depositoin system", Journal of the Electrochemical Society, Manchester, NH, US, pp. 2260-2263, (Aug. 1992).
Engqvist, J., et al., "Selective deposition of TiSi2 from H2-TiCl4 Gas mixtures and si: Aspects of Thermodynamics including Critical evaluation of thermochemical data in the Ti-Si System", Journal of the Electrochemical Society, Manchester, NH, US, pp. 3197-3205, (Nov. 1992).
Lee, J., et al., "Plasma enhanced chemical vapor deposition of blanket TiSi2 on oxide patterned wafers", Journal of the Electrochemical society, Manchester, NH, US, pp. 1159-1165, (Apr. 1992).
Bachmann, P., et al., "Plasma-Assisted Chemical Vapor Deposition Processes", MRS Bulletin, 52-59, (Dec., 1988).
Cowher, M., et al., "Low Temperature CVD Garnet Growth", J. Crystal Growth, 46, 399-402, (1979).
Esquivel, A., et al., "Electrical and Physical Characteristics of Dry Oxygen, High Pressure Oxidation for SUB-0.5 um CMOS Isolation", Abst. Int'l Electron Devices Meeting, (1994).
Herman, I., "Laser-Assisted Deposition of Thin Films from Gas-Phase and Surface-Adsorbed Molecules", Chem. Rev., 89, 1323, 1346-1349, (1989).
Ilderem, V., et al., "Optimized Deposition Parameters for Low Pressure Chemical Vapor Deposited Titanium Silicide", J. Electrochemical Soc.: Solid State Science and Technology, 2590-2596, (Oct. 1988).
Lie, L., et al., "High Pressure Oxidation of Silicon in Dry Oxygen", J. Electrochemical Soc. : Solid State Science and Technology, 2828-2834, (Dec. 1982).
Moeller, T., et al., "Semiconducting Elements, Ch. 30", In: Chemistry with Inorganic Qualitative Analysis, 2nd Edition, Academic Press, 995-996, (1984).
Morosanu, C., Thin Films by Chemical Vapor Deposition, Elsevier, N.Y., 42-54 & 460-475, (1990).
Panson, A., et al., "Chemical Vapor Deposition of YBa(2)Cu(3)O(7) Using Metalorganic Chelate Precursors", Appl. Phys. Lett., 53, 1756-1758, (Oct., 1988).
Rosler, R., et al., "Plasma-Enhanced CVD of Titanium Silicide", J. Vacuum Science Tech., B 2, 733-737, (Oct./Dec. 1984).
Yu, M., et al., "Surface Chemistry of the WF(6)-Based Chemical Vapor Deposition of Tungsten", IBM J. Research Development, 34, 875-883, (Nov. 1990).
Wolf, S., Silicon Processing for the VLSI Era, vol. 2: Process Integration, Lattice Press, Sunset Beach, California, pp. 202-203, (1990).

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