Chemical vapor deposition of silicon dioxide using hexamethyldis

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

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4272551, 4272552, 427255, 4272481, 427314, C23C 1600

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active

053043987

ABSTRACT:
A method for depositing silicon dioxide on the surface of a substrate or the like using a nitrogen-containing precursor is disclosed herein. In a preferred implementation the deposition is performed using an atmospheric pressure reactor, into which is directed toward the substrate surface a stream of source gas comprised of ozonated oxygen. A stream of a nitrogen-containing precursor such as, for example, hexamethyldisilazane (HMDS) is also directed into the reactor toward the substrate surface. In addition, a stream of a nitrogen-containing separator gas is directed into the reactor between the streams of precursor and source gases. The inventive deposition method has been shown to result in improved film nucleation on a variety of substrate surfaces.

REFERENCES:
patent: 4753855 (1988-06-01), Haluska et al.
patent: 4834020 (1989-05-01), Bartholomew et al.
"Improved Atmospheric-Pressure Chemical-Vapor-Deposition System for Depositing Silica and Phosphosilicate Glass Thin Films"; L. W. Winkle et al.; Solid State Technology, Oct., 1981, pp. 1-6.
"Advanced APCVD Reactors For Thin Film Deposition"; N. M. Gralenski; Microelectronic Mfg. & Testing, Sep. 1987; pp. 27-28 & 11-12.
"Advanced APCVD Reactors For Thin Film Deposition"; N. M. Gralenski; Microelectronic Mfg. & Testing, Sep./Oct., 1987; pp. 2-8 Lake Publishing Corporation, Libertyville, Ill. 60048.
"Nitrogen Contained HMDS (hexametyldisilazane) SiO.sub.2 CVD For Advanced Multi Level Interconnection"; Tsukasa Doi et al.; VMIC Conference; Jun. 8&9, 1993; pp. 84-88.

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