Stock material or miscellaneous articles – Web or sheet containing structurally defined element or... – Physical dimension specified
Patent
1979-05-21
1982-06-22
Ives, P.
Stock material or miscellaneous articles
Web or sheet containing structurally defined element or...
Physical dimension specified
428408, 428446, 428447, 428454, 428698, 427 34, 427 94, 4271261, 4271264, 219553, 4271266, 501 98, 501 99, B32B 904, B32B 900, B05D 512
Patent
active
043363040
ABSTRACT:
A laminated composite and a method for forming the composite by chemical vapor deposition. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200.degree. C.; and impinging a gas containing in a flowing atmosphere of air N.sub.2, SiCl.sub.4, and AlCl.sub.3 on the surface.
REFERENCES:
patent: B581564 (1976-05-01), Jacobson
patent: 3794003 (1976-10-01), Zirinsky et al.
patent: 3895219 (1975-07-01), Richerson et al.
patent: 4036653 (1977-07-01), Jacobson
patent: 4118539 (1978-10-01), Hirai et al.
Niihara et al., Chemical Vapour-Deposited Silicon Nitride, Part 1, Preparation and Some Properties, In J. of Materials Science, 11 (1976), pp. 593-603.
Niihara et al., Chemical Vapour-Deposited Silicon Nitride, Part 2, Density and Formation Mechanism, J. of Material Science, 11 (1976), 604-611.
Poponiak et al., Formation of Thick Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z on Si Substrate by Anodnitridization, In IBM Technical Disclosure Bulletin, vol. 19, No. 3, p. 905, Aug. (1976).
Brown et al., Properties of Si.sub.x O.sub.y Z.sub.z Films on Si, In J. Electrochem. Soc.: Solid State Science, Mar. (1963), pp. 311-317.
Jack, Review Sialons and Related Nitrogen Ceramics, In J. of Materials Science, 11 (1976), pp. 1135-1158.
Casey Alton W.
Landingham Richard L.
Bernheim William S.
Denny James E.
Gaither Roger S.
Ives P.
The United States of America as represented by the United States
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