Chemical vapor deposition of polycrystalline diamond with <10

Details Chemical vapor deposition of polycrystalline diamond with <10 Chemical vapor deposition of polycrystalline diamond with <10

1994-06-23

1995-08-01

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

427122, 4272551, 427314, 423446, 428408, 117929, C23C 1626

Patent

active

054378915

ABSTRACT:
Chemical vapor deposition of diamond with <100> orientation and (100) growth facets is performed at an increased growth rate and affords cubic diamond crystals when a gas mixture comprising hydrogen, a hydrocarbon such as methane and specific minor amounts of oxygen and an inert gas, preferably predominantly nitrogen, is employed.

REFERENCES:
patent: 4816286 (1989-03-01), Hirose
patent: 5147687 (1992-09-01), Garg et al.
patent: 5201986 (1993-04-01), Ota et al.
Beckmann et al., Diamond and Related Materials, 1, pp. 164-167 (1992).
Chu et al, "Mechanism of diamond growth by chemical vapor deposition on diamond (100), (111), and (110) surfaces: Carbon--13 Studies", J. Appl. Phys. 70(3), Aug. 1991, pp. 1695-1705.

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