Chemical vapor deposition of niobium and tantalum oxide films

Details Chemical vapor deposition of niobium and tantalum oxide films Chemical vapor deposition of niobium and tantalum oxide films

1992-11-03

1993-12-21

Beck, Shrive

Coating processes

Electrical product produced

Transparent base

4271263, 4272481, B05D 512, C23C 1600

Patent

active

052719570

ABSTRACT:
Thin, uniform films of niobium and tantalum complex metal oxides are deposited by chemical vapor deposition onto a substrate by vaporizing a single source precursor containing metal M' ions and metal M" ions, where metal M' is Li, Na, or K and metal M" is Nb or Ta, and contacting the vapor with the substrate at a temperature sufficiently high to decompose the precursor and form an M'M" metal oxide.

REFERENCES:
patent: 3911176 (1975-10-01), Curtis et al.
patent: 4963390 (1990-10-01), Lipeles et al.
patent: 4993361 (1991-02-01), Unvala
patent: 5051280 (1991-09-01), Hung
"Preparation of Crystalline LiNbO.sub.3 Films With Preferred Orientation oby Hydrolysis of Metal Alkoxides", Advanced Ceramic Materials, vol. 3, No. 5, 1988, pp. 503 et seq.
B. Curtis and H. Brunner, "The Growth of Thin Films of Lithium Niobate by Chemical Vapor Deposition", Mat. Res. Bull., vol. 10, pp. 515-520, 1975.
"Metal Alkoxides as Precursors for Electronic and Ceramic Materials", Bradley, Chem. Rev., vol. 89, pp. 1317-1322, 1989.

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