Chemical vapor deposition of metal pnictogenide films using sing

Coating processes – Coating by vapor – gas – or smoke

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427255, C23C 1634

Patent

active

054097355

ABSTRACT:
A process for depositing a film of metal pnictogenide. The process comprises providing a single source of a metal pnictogenide and heating said source to a temperature sufficient to sublime the single source at a pressure selected from a range of about 0.0001 to 760 torr so that a sublimate is delivered into a reaction zone. Within this reaction zone, a substrate is provided upon which deposition may occur. The reaction zone is heated to approximately 200.degree.-800.degree. C. The sublimate is passed through this reaction zone and over the substrate to produce a thin film of metal pnictogenide which is deposited upon the substrate.

REFERENCES:
patent: 4535000 (1985-08-01), Gordon
patent: 4585674 (1986-04-01), Gordon
patent: 4623400 (1986-11-01), Japka et al.
patent: 4803127 (1989-02-01), Hakim
patent: 4977106 (1990-12-01), Smith
Biunno, N. et al., Low Temperature Processing of Titanium Nitride Films by Laser Physical Deposition Appl. Phys Lett 54(16) 17 Apr. 1989 pp. 1519-1521.
Shizhi, L. et al. Plasma Chemical Vapor Deposition of Tin Plasma Chemistry and Plasma Processing vol. 4 No. 3 1984 pp. 147-161.
Webster's New Collegiate Dictionary 1961 p. 16.
Fowles, G. W. A. et al., Studies on the Behavior of Halides of the Transition Metals with Ammonia . . . Tetrachloride with Ammonia, 1953, pp. 2588-2593.
Sugiyama, Kozoh et al., Low Temperature Deposition of Metal Nitrides . . . Compounds, J. Electrochem. Soc.: Solid-State Science and Technology, Nov. 1975, pp. 1545-1549.
Saaeki, Yuzo et al., Reaction Process of Titanium Tetrachloride with . . . Formed, Bull. Chem. Soc. Jpn., vol. 55, No. 10, Oct. 1982, pp. 3193-3195.
Kurtz, S. H. et al., Chemical Vapor Deposition of Titanium Nitride at Low Temperatures Thin Solid Films, 140 (1986), pp. 277-291.
Fix, Renaud et al., Synthesis of Thin Films by Atmospheric Pressure Chemical . . . Precursors, Chem. Mater., vol. 2, No. 3, 1990, pp. 235-241.
Fix, Renaud M. et al., Solution-Phase Reactivity as a Guide to the Low-Temperature Chemical . . . Films, J. Am. Chem. Soc., vol. 2, No. 21, 1990, pp. 7833-7835.
Aguero, A. et al., A Low Temperature CVD Process for TiN Coatings, Mat. Res. Soc. Symp. Proc., vol. 168, 1990, Materials Research Society, pp. 311-316.
Fix, Renaud M., Titanium Nitride Thin Films: Properties and APCVD Synthesis Using . . . Precursors, Mat. Res. Soc. Symp. Proc. vol. 168, 1990, pp. 357-362.
Fix, Renaud et al., Chemical Vapor Deposition of Titanium, Zirconium, and Hafnium Nitride Thin Films, Chem. Mater., vol. 3, 1991, pp. 1138-1142.
Proscia, J., The Synthesis of Nitride Films from the Reaction of Amines . . . Halides. Presented at 4th Chem. Con. of N. America, NY, N.Y., Aug. 25-30 1991 (Abstract Only).
Winter, Charles H. et al., A Single-Source Precursor to Titanium Nitride Thin Films. Evidence . . . Process, J. Am. Chem. Soc., vol. 114, No. 3, 1992, pp. 1095-1097.
Z. Y. Chen, A. W. Castleman, Jr., "J. Chem. Phys.", 1993, 98, pp. 231-235.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Chemical vapor deposition of metal pnictogenide films using sing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical vapor deposition of metal pnictogenide films using sing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical vapor deposition of metal pnictogenide films using sing will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1566444

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.