Chemical vapor deposition of metal oxides

Details Chemical vapor deposition of metal oxides Chemical vapor deposition of metal oxides

1994-02-23

1995-02-14

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

4272551, 4272481, 4271262, 4271263, C23C 1640

Patent

active

053894014

ABSTRACT:
Films of metal oxides are deposited from vaporized precursor compounds, such as metal alkoxides, by reaction with the vapor of a compound, such as cyclohexenone, that is derived formally from a stable aromatic compound by replacing one hydrogen with a ketone functional group (.dbd.O) and adding three hydrogen atoms to other atoms in the aromatic system. For example, the vapor of titanium (IV) isopropoxide reacts with the vapor of 2-cyclohexen-1-one to deposit titanium dioxide at 400.degree. C. The deposit is highly transparent and free of carbon impurity. This vapor mixture with added aluminum isopropoxide deposits a highly insulating film of aluminum-doped titanium dioxide.

REFERENCES:
Pierson, "Handbook of Chemical Vapor Deposition (CVD), Principles, Technology and Applications", Noyes Publications (1992), N.J., U.S.A., pp. 226-242.

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