Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1991-04-10
1992-05-12
Pianalto, Bernard
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
C23C 1600
Patent
active
051126508
ABSTRACT:
A process for depositing a dense, thin film of a metal chalcogenide under high deposition rates is disclosed. The process comprises providing a source of vaporous metal halide so that it is delivered into a reaction zone provided with an inlet for the introduction thereof. A source of vaporous chalcogen is provided in communication with the inlet to promote an efficient intermixing of the chalcogen with the vaporous metal halide. Located downstream from the inlet in a reaction zone is a surface upon which deposition may occur. The reaction zone is heated to about 200-800 degrees Centigrade, and the reaction zone is then flushed with the chalcogen transported by an inert carrier gas. The carrier gas is passed with the metal halide and the chalcogen into the reaction zone across said substrate at atmospheric pressure. Thereupon, the vaporous metal halide and the vaporous chalcogen interact in the reaction zone to produce a film of metal chalcogenide which is deposited on the substrate.
REFERENCES:
"Chemical Vapor Deposition of Titanium Disulfide", Bull. Chem. Soc. Jpn., 1978, 51, 3240.
"Kinetic Study on Chemical Vapor Deposition of Titanium Disulfide Thin Film", J. Electrochem. Soc., 1989, 136, 1265.
"Plasma Assisted CVD of TiS.sub.2 ", Appl. Phys. A, 1989, 49, 105.
Lewkebandara T. Suren
Winter Charles H.
Pianalto Bernard
Wayne State University
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