Coating processes – Direct application of electrical – magnetic – wave – or... – Chemical vapor deposition
Patent
1992-04-08
1994-03-29
Pianalto, Bernard
Coating processes
Direct application of electrical, magnetic, wave, or...
Chemical vapor deposition
4272481, 427255, 427294, 427295, 427314, 427318, C23C 1600
Patent
active
052982955
ABSTRACT:
A process for depositing a film of metal chalcogenide is disclosed. The process comprises providing a single source of a metal chalcogenide and heating said source to a temperature sufficient to sublime the single source under a pressure ranging from 0.0001 to 760 torr so that the sublimate is delivered into a reaction zone. Within this reaction zone, a substrate is deposed upon which deposition may occur. The reaction zone is heated to approximately 200.degree. to 800.degree. C. The sublimate is passed through this reaction zone and over the substrate to produce a thin film of metal chalcogenide which is deposited upon the substrate.
REFERENCES:
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A. Bensalem et al., Novel Low Temperature Synthesis of Titanium Sulfide, Mat. Res. Bull., vol. 23, 1988, pp. 857-868.
P. Ehrlich et al., Darstellung und Eigenschaften von TiSCl.sub.2, Zeit. Anorg. Alig. Chem., 1959, vol. 301, pp. 289-290.
L. Bosnea et al., Mechanism of the Reaction Between Titanium Tetrachloride and Thiophenols, An. Stiint Univ., "Al. I. Cuza", Iasi, Sect. 1C, 1974, vol. 20, pp. 75-82.
K. Kanehori et al., Titanium Disulfide Films Fabricated By Plasma CVD, Solid State Ionics 18 & 19, 1986, pp. 818-822.
K. Kamehori et al., Kinetic Study on Chemical Vapor Deposition of Titanium Disulfide Thin Film, J. Electrochem. Soc. vol. 136, No. 5, May 1989, pp. 1265-1270.
S. Kikkawa et al., Titanium Disulfide Thin Film Prepared By Plasma CVD, J. Mater, Res., vol. 5, No. 12, Dec. 1990, pp. 2894-2901.
Lewkebandara T. Suren
Winter Charles H.
Pianalto Bernard
Wayne State University
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