Stock material or miscellaneous articles – Composite – Of inorganic material
Patent
1994-05-18
1999-03-16
King, Roy V.
Stock material or miscellaneous articles
Composite
Of inorganic material
4272551, 4272552, 427255, 148DIG64, B32B 900, C23C 1600
Patent
active
058828052
ABSTRACT:
Triisopropylindium ((CH.sub.3).sub.2 CH).sub.3 In is used as an n-type dopant for II/VI semiconductor materials. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations in the range of the low 10.sup.15 cm.sup.-3 and does not exhibit an appreciable memory effect.
REFERENCES:
patent: 5028561 (1991-07-01), Kamath et al.
patent: 5273931 (1993-12-01), Taskar et al.
patent: 5318666 (1994-06-01), Elkind et al.
Journal of Electronic Materials, vol. 22, No. 8 Korenstein et al. published un., 1993, "Indium Doping of HgCdTe Grown by Metalorganic Chemical Vapor Deposition-Direct Alloy Growth Using Triisopropylindium and Diisopropyltellurium Adduct" pp. 853-587.
Journal of Electronic Materials, vol. 22, No. 8 S.J.C. Irvine et al. published Jun. 1993. "A New N-Type Doping Precursor for MOCVD-IMP Growth Detector Quality MCT" pp. 859-864.
Journal of Crystal Growth, vol. 124, Nos. 1-4 pp. 88-92 Chen et al. published Aug. 1992. "Triisopropylindium for OMVPE Growth".
Gedridge, Jr. Robert W.
Higa Kelvin T.
Irvine Stuart JC.
Korenstein Ralph
Bokar Gregory M.
Church Stephen J.
Kalmbaugh David S.
King Roy V.
The United States of America as represented by the Secretary of
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