Chemical vapor deposition of aluminum on an activated surface

Details Chemical vapor deposition of aluminum on an activated surface Chemical vapor deposition of aluminum on an activated surface

1986-11-10

1987-12-29

Childs, Sadie L.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427124, 427250, 427252, 427255, 427304, 427404, B05D 512, C23C 1620

Patent

active

047160500

ABSTRACT:
Chemical vapor deposition of an aluminum layer on a substrate is facilitated by surface activation prior to deposition. Surface activation is at relatively low temperature and results in a hydrated surface; low temperature surface activation is advantageous in the interest of keeping deposition apparatus free of additional chemicals, and substrates activated in this manner may be stored for considerable lengths of time prior to aluminum deposition. Among suitable activating agents are organochromium, organosilane, and organoaluminum compounds.

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patent: 4328261 (1982-05-01), Heinecke et al.
patent: 4460618 (1984-07-01), Heinecke et al.
patent: 4542074 (1985-09-01), Sirinyan et al.
Thin Solid Films, "Aluminum Coatings by the Decomposition of Alkyls", vol. 45 (1977), H. O. Pierson, pp. 257-263.
Solid State Technology, "LPCVD of Aluminum and Al-Si Alloys for Semiconductor Metallization", Dec. 1982, M. J. Cooke et al., pp. 62-65.
Proceedings of the Fourth European Conference on Chemical Vapor Deposition, "Low Pressure Aluminum CVD", 1983, R. A. H. Heinecke et al., pp. 119-121.

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