Chemical vapor deposition method using a plasma self-cleaning

Details Chemical vapor deposition method using a plasma self-cleaning Chemical vapor deposition method using a plasma self-cleaning

1990-03-09

1991-08-20

Morgenstern, Norman

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

427309, 427307, 4272552, 4272551, 427255, 4272481, 156643, 156646, C23C 1602, B05D 306

Patent

active

050413112

ABSTRACT:
A CVD method comprises the steps of making a plasma self-cleaning within a chamber using a gas which includes fluorine, coating an inside of the chamber by a first layer of a material which includes silicon and nitrogen, and forming a second layer on a predetermined surface within the chamber by a chemical vapor deposition. The second layer is made of a material which includes a quantity of nitrogen smaller than a quantity of nitrogen included in the first layer.

REFERENCES:
patent: 4058638 (1977-11-01), Morton
patent: 4579609 (1986-04-01), Reit et al.
patent: 4629635 (1986-12-01), Brors
European Search Report.

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