Chemical vapor deposition method of high quality diamond

Details Chemical vapor deposition method of high quality diamond Chemical vapor deposition method of high quality diamond

1993-09-03

2000-12-19

Griffin, Steven P.

Chemistry of inorganic compounds

Carbon or compound thereof

Elemental carbon

4272498, C23C 1627

Patent

active

061624128

ABSTRACT:
Diamond having a large coefficient of thermal conductivity is prepared by a CVD method in which a reaction gas is decomposed and reacted under such condition that a concentration of carbon atoms in relation to hydrogen gas (A %), a concentration of nitrogen gas in relation to the whole reaction gas (B ppm) and a concentration of oxygen atoms in relation to the hydrogen gas (C %) satisfy the equation:

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patent: 3895313 (1975-07-01), Seito
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patent: 4816286 (1989-03-01), Hirose
patent: 5015494 (1991-05-01), Yamazaki
Zhang et al, "In situ observations of optical emission spectra in the diamond deposition environment of arc discharge plasma chemical vapor deposition", Applied Physics Letters, vo. 57, No. 14, Oct. 1, 1990, pp. 1467-1469.

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