Chemical vapor deposition method of growing oxide films with gia

Details Chemical vapor deposition method of growing oxide films with gia Chemical vapor deposition method of growing oxide films with gia

1994-11-28

1996-01-30

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117103, 117104, 117944, C30B 2308

Patent

active

054873568

ABSTRACT:
A chemical vapor deposition method for forming films or coatings of metal oxide films showing a giant magnetoresistive effect, with the metal oxides having the formula La.sub.x A.sub.1-x MnO.sub.3 wherein A is selected from the group consisting of barium, calcium, manganese, and strontium, and x is a number in the range of from 0.2 to 0.4. The method uses a liquid source delivery CVD approach, wherein source reagent solution precursor is flash vaporized and is delivered to a CVD chamber, wherein it decomposes to deposit the multicomponent metal oxide films with well-controlled stoichiometry.

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