Chemical vapor deposition method for the thin film of semiconduc

Details Chemical vapor deposition method for the thin film of semiconduc Chemical vapor deposition method for the thin film of semiconduc

1986-05-29

1987-11-10

Smith, John D.

Fishing, trapping, and vermin destroying

118500, 118730, 156613, H01L 21205

Patent

active

047057009

ABSTRACT:
A chemical vapor deposition method for making a semiconductor thin film is disclosed, which is characterized in that, in the method wherein semiconductor thin films are allowed to deposit onto the substrates by allowing the susceptor in the shape of polygonal frustum fitted with a plurality of semicondutor substrates to the side faces thereof to rotate in the vertical type reaction tube, by introducing the source gases and the carrier gas into the tube, and by heating the substrates to allow the source gases to react through thermal decomposition, the number of rotations of susceptor is varied in terms of rectangular wave function, trapezoidal wave function or sine wave function and the susceptor is allowed to rotate in converse directions depending on the positive region and the negative region of the function.

REFERENCES:
patent: 3633537 (1972-01-01), Howe
patent: 4275282 (1981-06-01), Miller
patent: 4322592 (1982-03-01), Martin
patent: 4579080 (1986-04-01), Martin
patent: 4588451 (1986-05-01), Vernon
patent: 4596208 (1986-06-01), Wolfson

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