Chemical vapor deposition method for forming SiO.sub.2

Details Chemical vapor deposition method for forming SiO.sub.2 Chemical vapor deposition method for forming SiO.sub.2

1993-11-30

1995-10-31

Brenenman, R. Bruce

Fishing, trapping, and vermin destroying

427561, 427563, 427568, 427585, H01L 2131, B05D 126, B05D 512, B05D 714

Patent

active

054628997

ABSTRACT:
A silicon oxide film is deposited on a substrate by chemical vapor deposition (CVD) using an organosilicon compound such as tetraethylorthosilicate (TEOS) and ozone as the principal reactants. The organosilicon compound gas and an ozone-oxygen gas which is relatively low in ozone concentration such as 0.1-1% are mixed in a gas mixer outside the CVD reaction chamber, and the resultant gas mixture is fed into the reaction chamber. Separately, another ozone-oxygen gas which is relatively high in ozone concentration such as 1-10% is introduced directly into the reaction chamber so as to come into contact with and mix with the aforementioned gas mixture in the vicinity of the substrate surface. The obtained silicon oxide film is good in film properties and step coverage, and the CVD operation does not suffer from deposition of reaction products in the gas feeding pipes and gas injecting nozzles.

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Y. Ikeda et al., "Oxide Film Formation using O.sub.3 /Organic-Source APCVD", Denkikagaku, vol. 56, No. 7 (1988), pp. 527-532.

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