Chemical vapor deposition method for forming fluorine containing

Details Chemical vapor deposition method for forming fluorine containing Chemical vapor deposition method for forming fluorine containing

1992-06-05

1994-02-22

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

4272553, 427573, 427574, C23C 1640, C23C 1650

Patent

active

052885186

ABSTRACT:
A chemical vapor deposition method for forming a fluorine-containing silicon oxide film comprises introducing a gaseous mixture of alkoxysilane or its polymers as a source gas with fluoroalkoxysilane added thereto into a reaction chamber and performing decomposition of the gaseous mixture to deposit the fluorine-containing silicon oxide film onto a substrate. During the formation of the fluorine-containing silicon oxide film, at least one of compounds containing phosphorus or boron such as organic phosphorus compounds and organic boron compounds may be evaporated and introduced into said gaseous mixture, thereby adding at least one of phosphorus and boron to said fluorine-containing silicon oxide film. The fluorine-containing oxide film may be formed by effecting the decomposition of the gaseous mixture in the presence of ozone gas, or under ultraviolet radiation, or gas plasma.

REFERENCES:
patent: 4683024 (1987-07-01), Miller et al.
patent: 4708884 (1987-11-01), Chandross et al.
patent: 4791005 (1988-12-01), Becker et al.
patent: 4894352 (1990-01-01), Lane et al.
Journal of Electronic Materials, vol. 19, No. 1. 1990 "Ozone/Organic-Source APCVD for Conformal Doped Oxide Films" by Y. Ikeda et al.

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