Coating apparatus – Gas or vapor deposition – Crucible or evaporator structure
Patent
1992-12-28
1995-01-24
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Crucible or evaporator structure
118715, 118725, 261156, C23C 1600
Patent
active
053839706
ABSTRACT:
A chemical vapor deposition method for forming a deposited film on a substrate using a film-forming liquid raw material in which said film-forming liquid raw material is pulverizing into liquid fine particles and said liquid fine particles are heated together with a gas to produce a film-forming raw material gas; said film-forming raw material gas is introduced into a reaction chamber; and said film-forming raw material gas is chemically reacted with a surface of a substrate disposed in said reaction chamber.
A chemical vapor deposition apparatus suitable for practicing said chemical vapor deposition method, characterized by a liquid pulverizing mechanism capable of pulverizing a film-forming liquid raw material into liquid fine particles while precisely adjusting the amount of the film-forming liquid raw material to be supplied thereinto and a liquid gasifying mechanism capable of efficiently gasifying the liquid fine particles to produce a film-forming raw material gas into a reaction chamber in which a deposited film is to be formed on a substrate.
REFERENCES:
patent: 668953 (1901-02-01), Dawson
patent: 846679 (1907-03-01), Mason
patent: 959950 (1910-05-01), Loose
patent: 977066 (1910-11-01), Blom
patent: 979409 (1910-12-01), Barker
patent: 1122703 (1914-12-01), Dull
patent: 1160585 (1915-11-01), Edison
patent: 1202771 (1916-10-01), Babbitt
patent: 1965144 (1934-07-01), Kane
patent: 3969449 (1976-07-01), Shires
patent: 4276243 (1981-06-01), Partus
patent: 5203925 (1993-04-01), Shibuya
patent: 5204314 (1993-04-01), Kirlin
Mat. Res. Soc. Symp. Proc. VLSIV. 1990 Materials Research Society, T. Shinzawa et al. pp. 377-382, "Selective A1 CVD Using Dimethyl Aluminum Hydride".
T. Amazawa, et al., A 0.25.mu. Via Plug Process Using Selective CVD Aluminum for Multilevel Interconnection, Int'l Elec. Dev. Meeting 1991, pp. 265-268.
Asaba Tetsuo
Makino Kenji
Bueker Richard
Canon Kabushiki Kaisha
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