Chemical vapor deposition furnace and furnace apparatus

Details Chemical vapor deposition furnace and furnace apparatus Chemical vapor deposition furnace and furnace apparatus

1995-05-01

1995-12-12

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118719, C23C 1600

Patent

active

054746132

ABSTRACT:
Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O.sub.2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to <5 .ANG. RMS as measured on a Talystep mechanical profiler and has a thermal conductivity of at least about 300 W/mk. The silicon carbide is particularly suitable for applications where high polishability and thermal conductivity is desired, such as hard disc drives and read/write heads of head-disc assemblies, and also optical apparatus which require a very high polish.

REFERENCES:
patent: 4123989 (1978-11-01), Jewett
patent: 4861533 (1989-08-01), Bertin
patent: 4923716 (1990-05-01), Brown
patent: 4990374 (1991-02-01), Keeley
patent: 4997678 (1991-03-01), Taylor
patent: 5043773 (1991-08-01), Precht
patent: 5071596 (1991-12-01), Goela

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