Chemical vapor deposition (CVD) process for plasma depositing si

Details Chemical vapor deposition (CVD) process for plasma depositing si Chemical vapor deposition (CVD) process for plasma depositing si

1990-07-13

1991-10-29

Beck, Shrive

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 427249, C23C 1650, C23C 1632

Patent

active

050615149

ABSTRACT:
A plasma CVD process for forming silicon carbide-type films onto a substrate comprising the steps of:

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patent: 4877651 (1989-10-01), Dory
patent: 4923716 (1990-05-01), Brown et al.
D. Cagliostro, et al, "Analysis of the Pyrolysis Products of Dimethyldichlorosilane in the Chemical Vapor Deposition of Silicon Carbide in Argon" J. Am. Ceram. Soc. 73 (1900).
M. L. Pearce, et al. "Formation of Silicon and Titanium Carbides by Chemical Vapor Deposition", J. Am. Ceram. Soc., 51 (1968).
Richard D. Veltri, et al., "Chemical Vapor Deposited SiC Matrix Composites", J. Am. Caram. Soc. 72 (1989).
A. Mestari, et al. "Evidence for Free Caron in Amorphous OMCVD Silicon-Rich Si.sub.x C.sub.1-x Coatings", Journal de Physique, vol. 50, May 1989.
F. Langlais, et al. "On the Kinetics of the CVD of Si from SiH.sub.2 Cl.sub.2 H.sub.2 and SiC from CH.sub.3 SiCl.sub.3 /H.sub.2 in a Vertical Tubular Hot-Wall Reactor" Journal de Physique, vol. 50, May, 1989, pp. 93-103.
S. Patai, et al, "The Chemistry of Organic Silicon Compounds" John Wiley & Sons (1989), pp. 1233-1234.
R. Brutsch "Chemical Vapour Deposition of Silicon Carbide and its Applications", Thin Solid Films 126 (1985), pp. 313-318.
Y. G. Roman, et al. "Silicon Carbide Chemical Vapour Infiltration", Journal de Physique, vol. 50, May 1989.

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