Chemical vapor deposition (CVD) of silicon dioxide films using o

Details Chemical vapor deposition (CVD) of silicon dioxide films using o Chemical vapor deposition (CVD) of silicon dioxide films using o

1995-05-11

1997-06-10

Utech, Benjamin

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C23C 1640

Patent

active

056373511

ABSTRACT:
A low temperature chemical vapor deposition method for depositing silicon dioxide comprising the steps of heating a substrate upon which deposition is desired to a temperature of between 250.degree. C. (482.degree. F.) and 420.degree. C. (788.degree. F.) in a vacuum having a pressure of from about 0.1 to about 2.0 torr and introducing, together with a silane and oxygen or oxygen-containing silane, a free radical promoter (e.g., di-t-butylperoxide, t-butylhydroperoxide, or n-butylnitrite) as a co-reactant into the vacuum.

REFERENCES:
patent: 4981724 (1991-01-01), Hochberg et al.
patent: 4988533 (1991-01-01), Freeman et al.
patent: 5068124 (1991-11-01), Batey et al.
patent: 5360646 (1994-11-01), Morita
Patent Abstracts of Japan, vol. 008, No. 212, (C-244), 27 Sep. 1984.
"Chemical Vapor Deposition of SiO2 From Ozone-Organosilane Mixtures Near Atmospheric Pressure", Mat. Res. Soc. Symp. Proc., vol. 282, 1993, pp. 575-580. (month unavailable).

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