Chemical vapor deposition (CVD) calibration method providing...

Details Chemical vapor deposition (CVD) calibration method providing... Chemical vapor deposition (CVD) calibration method providing...

2005-08-09

2005-08-09

Chen, Bret (Department: 1762)

Coating processes

Measuring, testing, or indicating

C427S248100

Reexamination Certificate

active

06926920

ABSTRACT:
A chemical vapor deposition (CVD) method for forming a microelectronic layer provides a source material dispensing nozzle employed within a chemical vapor deposition (CVD) apparatus which is employed within the chemical vapor deposition (CVD) method. The source material dispensing nozzle is calibrated to provide a calibrated source material dispensing nozzle. The calibrated source material dispensing nozzle is employed within the chemical vapor deposition (CVD) apparatus while employing the chemical vapor deposition (CVD) method for forming a chemical vapor deposition (CVD) deposited microelectronic layer upon the substrate positioned within the chemical vapor deposition (CVD) apparatus.

REFERENCES:
patent: 5284519 (1994-02-01), Gadgil
patent: 5324386 (1994-06-01), Murakami et al.
patent: 5503678 (1996-04-01), Usami
patent: 5800753 (1998-09-01), Donadio
patent: 5843234 (1998-12-01), Finn et al.
patent: 5994678 (1999-11-01), Zhao et al.
patent: 6499333 (2002-12-01), Ko et al.

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