Chemical vapor deposition chamber having an adjustable flow flan

Details Chemical vapor deposition chamber having an adjustable flow flan Chemical vapor deposition chamber having an adjustable flow flan

1998-09-02

2000-06-27

Dang, Thi

Coating apparatus

Gas or vapor deposition

118723, 118729, C23C 1600

Patent

active

060802413

ABSTRACT:
A chemical vapor deposition (CVD) reactor for growing epitaxial layers on wafers includes a chamber having an interior region and exterior region. The chamber includes one or more apertures extending therethrough for passing reactant gases from the exterior region of the chamber to the interior region of the chamber. The CVD reactor also includes one or more reactant gas injectors which are releasably secured to the one or more apertures in the chamber. Each reactant gas injector includes one or more passageways for passing reactant gas through the apertures in the chamber and into the interior region of the chamber. At least one of the injectors is releasably secured to the apertures so that the injector(s) may be removed from the aperture(s) of the chamber without entering the interior region of the chamber.

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