Chemical vapor deposition apparatus and method

Details Chemical vapor deposition apparatus and method Chemical vapor deposition apparatus and method

2003-12-16

2008-03-25

Lund, Jeffrie R (Department: 1763)

Coating apparatus

Program, cyclic, or time control

C118S715000, C118S729000, C118S684000, C118S697000, C156S345260, C156S345340, C156S345540, C700S121000

Reexamination Certificate

active

07347900

ABSTRACT:
A chemical vapor deposition (CVD) apparatus includes a process chamber where a deposition process is performed on a wafer. A gas supply assembly is mounted in the process chamber for supplying a process gas to the process chamber, and a vacuum pump is mounted in the process chamber for exhausting the process gas. A support is mounted in the process chamber for supporting the wafer, and a position control assembly raises and lowers the chuck. A controller controls the position control assembly to vary a distance between the wafer and the gas supply assembly during the deposition process. A CVD method for forming a deposition layer on a wafer includes supplying a process gas to a process chamber, dividing a process time into a plurality of process stages, varying a distance between the wafer and a gas supply assembly according to the process stages, and exhausting the process gas.

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