Chemical vapor deposition apparatus

Details Chemical vapor deposition apparatus Chemical vapor deposition apparatus

1997-08-04

2000-11-07

Silverman, Stanley S.

Coating apparatus

Gas or vapor deposition

118724, 118725, 118726, C23C 1600

Patent

active

061430773

ABSTRACT:
A source gas delivery system 4 which delivers the source gas to the surface of the heated substrate 20 is furnished with a gas delivery guide 44 of a shape such that the distance from the substrate 20 becomes narrower either gradually on in steps from the edge of the gas delivery port 443 on the same axis as the substrate 20 toward the outer edge, and delivers the source gas in such a way that the thickness distribution of the boundary layer which is the region in the vicinity of the surface of the substrate 20 where the velocity of the flow of source gas along the surface of the substrate is essentially zero is almost constant or gradually becomes narrower in the direction of the flow.

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patent: 5536319 (1996-07-01), Wary et al.
High Purification of Cu Thin Films by Oxygen Addition . . . ; 1995 Dry Process Symposium; A. Kajita, H. Kaneko et al.; pp. 123-128.
Advanced Metalization and Interconnect Systems For Ulsi Applications; Oct. 1-3, 1996 Boston, Massachusetts, pp. 54-55.
The Deposition Rate Cu-CVD with Cu(hfac)(tmvs) A. Kobayashi et al.; presented Jan. 10, 1997.
Three-dimensional Equipment Modeling . . . ; J. Vac.Sci.Tech. A14(3); May/Jun. 1996.

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