Chemical vapor deposition apparatus

Details Chemical vapor deposition apparatus Chemical vapor deposition apparatus

1991-10-11

1993-05-18

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118725, 118726, 423219, C23C 1600

Patent

active

052117588

ABSTRACT:
A chemical vapor deposition apparatus having a gas purifier for purifying a raw-material gas such as AsH.sub.3 or PH.sub.3 gas, the gas purifier being constructed as the combination of an organometal and a molecular sieve. Gas of AsH.sub.3, PH.sub.3 or the like is introduced into the organometal whereby impurities such as H.sub.2 O or O.sub.2 contained in the raw-material gas (AsH.sub.3, PH.sub.3, etc) are removed. Further, organometal vapor occured from gas purifier is removed by the molecular sieve.

REFERENCES:
patent: 4564509 (1986-01-01), Shealy et al.
patent: 4659552 (1987-04-01), Tom
patent: 4734273 (1988-03-01), Haskell
patent: 4735634 (1988-04-01), Norman
Shealy et al., Improved Photoluminescence of Organometallic Vapor Phase Epitaxial AlGaAs Using a New Gettering Technique on the Arsine Source, Appl. Phys. Lett 42(1), 83-85 (1983).
Shealy et al., A New Technique for Gettering Oxygen and Moisture from Gases Used In Semiconductor Processing, Appl. Phys. Lett 41(1), 88-90 (1992).

Affiliated with

Also associated with

Rating

Chemical vapor deposition apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical vapor deposition apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical vapor deposition apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-801852