Chemical vapor deposition apparatus

Details Chemical vapor deposition apparatus Chemical vapor deposition apparatus

1985-12-03

1987-12-01

Lawrence, Evan K.

Coating apparatus

Gas or vapor deposition

Multizone chamber

118723, 118725, 118728, 118 501, C23C 1646, C23C 1650

Patent

active

047096551

ABSTRACT:
A chemical vapor deposition apparatus includes a gas mixing chamber and a water-cooled reaction chamber with adjustable water-cooled baffle between them. A wafer is clamped face down to a chuck and an inert gas such as helium is forced between the chuck and the wafer to insure proper heat conduction from chuck to wafer. The chuck can be radiantly heated from above and operated in a plasma-enhanced mode. A wafer loading apparatus driven by a computer is isolated by a loadlock during deposition to enhance cleanliness. The chamber can be plasma cleaned to reduce downtime.

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