Chemical vapor deposition and chemicals with diarsines and polya

Details Chemical vapor deposition and chemicals with diarsines and polya Chemical vapor deposition and chemicals with diarsines and polya

1990-02-22

1991-03-12

Morgenstern, Norman

Coating processes

Coating by vapor, gas, or smoke

Metal coating

4272552, 437 81, 437133, 156613, 556 64, 556 65, 556 70, B05D 512, C23C 1618, C23C 1630

Patent

active

049992236

ABSTRACT:
A MOCVD process for depositing an arsenic-containing film utilizes an organoarsine compound having at least one As-As bond, in particular, diarsines and compounds having arsenic rings of 5 or 6 arsenic atoms.

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patent: 4857655 (1989-08-01), Valentine, Jr.
patent: 4900855 (1990-02-01), Hui et al.
patent: 4904616 (1990-02-01), Bohling et al.
patent: 4906762 (1990-03-01), Sawara et al.
Speckman et al, Appl. Phys. Lett., vol. 50, No. 11, Mar. 16, 1987, pp. 676-678.
Lum et al., Applied Phys. Lett., vol. 50, No. 5, Feb. 2, 1987, pp. 284-286.
Dictionary of Organometallic Compounds, vol. 1, (Chapman & Hall, London), c. 1984, pp. 139, 152.
Wilkinson et al., Eds., Comprehensive Organometallic Chemistry, vol. 2, (Pergamon Press, Oxford) c. 1982, pp. 681, 702-703.

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