Chemical vapor deposition

Coating processes – Electrical product produced – Welding electrode

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Details

427248A, 427249, B05D 314, C23C 1100, C23C 1300

Patent

active

041073525

ABSTRACT:
This invention relates to an improved method of depositing thin layers of material on a substrate by means of chemical vapor deposition and particularly to addition of gas to the chemical vapor gases, which additional gas reduces conductive heat loss and improves the rate and quality of the coating. The invention has particular application to silicon carbide filaments and their coating with barrier layers of materials, such as hafnium carbide, hafnium nitride, etc., which are useful layers for inhibiting the migration of other materials into the silicon carbide when the silicon carbide filament is used as a reinforcing medium in a composite structure.

REFERENCES:
patent: 2901381 (1959-08-01), Teal
patent: 2962388 (1960-11-01), Ruppert et al.
patent: 3642522 (1972-02-01), Gass et al.
patent: 3684585 (1972-08-01), Stroup et al.
patent: 3900592 (1975-08-01), Kennedy et al.
patent: 3964937 (1976-06-01), Post et al.

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