Chemical thinning of epitaxial silicon layer over buried oxide

Details Chemical thinning of epitaxial silicon layer over buried oxide Chemical thinning of epitaxial silicon layer over buried oxide

2005-08-09

2005-08-09

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S459000, C438S753000

Reexamination Certificate

active

06927146

ABSTRACT:
The present invention discloses a method including: providing a silicon wafer; forming a buried oxide (BOX) in the silicon wafer below a silicon body; and reducing a thickness of the silicon body by chemical thinning.

REFERENCES:
patent: 5726480 (1998-03-01), Pister
patent: 6083849 (2000-07-01), Ping et al.
patent: 6448152 (2002-09-01), Henley et al.
patent: 6653209 (2003-11-01), Yamagata
patent: 2003/0157809 (2003-08-01), Geist
patent: 2001168308 (2001-06-01), None

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