Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier
Reexamination Certificate
2005-06-07
2005-06-07
Mai, Son L. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
Reexamination Certificate
active
06903433
ABSTRACT:
Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solide state chemical sensors. Detection of the following chemical species was established: hydrogen, deuterium, carbon monoxide, molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.
REFERENCES:
patent: 3757123 (1973-09-01), Archer et al.
patent: 4953387 (1990-09-01), Johnson et al.
patent: 5362975 (1994-11-01), von Windheim et al.
patent: 5417821 (1995-05-01), Pyke
patent: 5517054 (1996-05-01), Huang et al.
patent: 5602324 (1997-02-01), Yanagida et al.
patent: 5716506 (1998-02-01), Maclay et al.
patent: 5979934 (1999-11-01), Shirk et al.
patent: 6027954 (2000-02-01), Hunter
patent: 6433356 (2002-08-01), Cahen et al.
patent: 19718584 (1997-05-01), None
patent: 63071648 (1988-04-01), None
Electron-Hole Pair Creation at Ag and Cu Surfaces by Adsorption of Atomic Hydrogen and Deuterium by H. Nienhaus, et al.; Physical Review Letters, vol. 82, No. 2, Jan. 11, 1999; pp. 446-449.
An ultrahigh vacuum system for the fabrication and characterization of ultrathin metal-semiconductor films and sensors b Howard W. Bergh, et al.; Review of Scientific Instruments, vol. 70, No. 4, Apr. 1999; pp. 2087-2094.
Selective H atom sensors using ultrathin Ag/Si Schottky diodies by Hermann Nienhaus, et al.; Applied Physics Letters, vol. 74, No. 26, Jun. 28, 1999, pp. 4046-4048.
Ultrathin Cu films on Si(111): Schottky barrier formation and sensor applications by H. Nienhaus, et al.; J. Vac. Sci. Technol. A17(4), Jul./Aug. 1999; pp. 1683-1687.
Morphological investigation of ultrathin Ag and Ti films grown on hydrogen terminated Si(111) by B. Gergen; J. Vac. Sci. Technol. B 18(5), Sep./Oct. 2000; pp. 2401-2405.
Chemically Induced Electronic Excitations at Metal Surfaces by Brian Gergen; www.sciencemag.org, Science, vol. 294 Dec. 21, 2001; pp. 2521-2523.
Observation of excited electrons from nonadiabatic reactions of NO and O2 on polycrystalline Ag by B. Gergen, al.; Surface Science 488 (2001) 123-132.
Engineers Develop New Chemical Sensor Based on Experimental Physics Breakthrough; National Science Foundation, NS News, Dec. 20, 2001.
Bergh Howard S.
Gergen Brian
McFarland Eric W.
Mujumdar Arunava
Nienhaus Hermann
Adrena, Inc.
Mai Son L.
O'Neil Michael A.
Tran Mai-Huong
LandOfFree
Chemical sensor using chemically induced electron-hole... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical sensor using chemically induced electron-hole..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical sensor using chemically induced electron-hole... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3478833