Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-06-10
2008-06-10
Hoang, Quoc (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S449000, C257SE27040, C257S471000, C257SE29048, C257S473000, C257SE29338
Reexamination Certificate
active
07385271
ABSTRACT:
Electro-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solide state chemical sensors. Detection of the following chemical species was established: hydrogen, deuterium, carbon monoxide, molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.
REFERENCES:
patent: 3513366 (1970-05-01), Clark
patent: 3550260 (1970-12-01), Saltich et al.
patent: 3757123 (1973-09-01), Archer et al.
patent: 3980915 (1976-09-01), Chapman et al.
patent: 5285084 (1994-02-01), von Windheim et al.
patent: 5285727 (1994-02-01), Reams et al.
patent: 5362975 (1994-11-01), von Windheim et al.
patent: 5417821 (1995-05-01), Pyke
patent: 5554859 (1996-09-01), Tsukamoto et al.
patent: 5602324 (1997-02-01), Yanagida et al.
patent: 5622877 (1997-04-01), Ashkinazi et al.
patent: 5979934 (1999-11-01), Shirk et al.
patent: 6066884 (2000-05-01), Krutsick
patent: 6184564 (2001-02-01), Gould
patent: 6261932 (2001-07-01), Hulfachor
patent: 6433356 (2002-08-01), Cahen et al.
patent: 6486476 (2002-11-01), Ochiai et al.
patent: 6569779 (2003-05-01), Lundström et al.
patent: 6903433 (2005-06-01), McFarland et al.
patent: 6998693 (2006-02-01), McFarland et al.
patent: 7057213 (2006-06-01), McFarland et al.
patent: 2006/0275968 (2006-12-01), Mantl et al.
patent: 4497477 (1995-10-01), None
patent: 19718584 (1997-05-01), None
patent: 63-71648 (1988-04-01), None
patent: 6-222027 (1994-08-01), None
patent: 7-103924 (1995-04-01), None
patent: 7-239314 (1995-09-01), None
patent: 9801610 (1999-11-01), None
patent: 514042 (2000-12-01), None
patent: WO 95/10039 (1995-04-01), None
patent: WO 99/58964 (1999-11-01), None
Electron-Hole Pair Creation at Ag and Cu Surfaces by Adsorption of Atomic Hydrogen and Deuterium by H. Nienhaus, et al.; Physical Review Letters, vol. 82, No. 2, Jan. 11, 1999; pp. 446-449.
An ultrahigh vacuum system for the fabrication and characterization of ultrathin metal-semiconductor films and sensors by Howard W. Berg, et al.; Review of Scientific Instruments, vol. 70, No. 4, Apr. 1999; pp. 2087-2094.
Selective H atom sensors using ultrathin Ag/Si Schottky diodies by Hermann Nienhaus, et al.; Applied Physics Letters, vol. 74, No. 26, Jun. 28, 1999; pp. 4046-4048.
Ultrathin Cu films on Si(111): Schottky barrier formation and sensor applications by H. Nienhaus, et al.; J. Vac. Sci. Technol. A 17(4), Jul./Aug. 1999; pp. 1683-1687.
Morphological investigation of ultrathin Ag and Ti films grown on hydrogen terminated Si(111) by B. Gergen; J. Vac. Sci. Technol. B 18(5), Sep./Oct. 2000; pp. 2401-2405.
Chemically Induced Electronic Excitations at Metal Surfaces by Brian Gergen; www.sciencemag.org, SCIENCE, vol. 294, Dec. 21, 2001; pp. 2521-2523.
Observation of excited electrons from nonadiabatic molecular reactions of NO and O2on polycrystalline Ag by B. Gergen, et al.; Surface Science 488 (2001) 123-132.
Engineers Develop New Chemical Sensor Based on Experimental Physics Breakthrough; National Science Foundation, NSF News, Dec. 20, 2001.
Bergh Howard S.
Gergen Brian
McFarland Eric W.
Mujumdar Arunava
Nienhaus Hermann
Adrena, Inc.
Hoang Quoc
O'Neil Michael A.
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