Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...
Patent
1997-07-22
1999-06-01
Chu, John S.
Radiation imagery chemistry: process, composition, or product th
Diazo reproduction, process, composition, or product
Composition or product which contains radiation sensitive...
430189, 4302701, G03F 7004
Patent
active
059087307
ABSTRACT:
Proposed is a positive- or negative-working chemical-sensitization photoresist composition having advantages in respect of the contrast and resolution of patterning, photosensitivity and cross sectional profile of the patterned resist layer as well as in respect of stability of the latent image formed by pattern-wise exposure to light before post-exposure baking treatment. The composition comprises: (A) 100 parts by weight of a film-forming resinous ingredient which causes a change, i.e. increase or decrease, of solubility in an aqueous alkaline solution by the interaction with an acid; and (B) from 0.5 to 20 parts by weight of a radiation-sensitive acid-generating agent which is a diazomethane compound represented by the general formula
REFERENCES:
patent: 4522911 (1985-06-01), Clecak et al.
patent: 4601969 (1986-07-01), Clecak et al.
patent: 4735885 (1988-04-01), Hopf et al.
patent: 4883740 (1989-11-01), Schwalm et al.
patent: 5191124 (1993-03-01), Schwalm et al.
patent: 5216135 (1993-06-01), Urano et al.
patent: 5250669 (1993-10-01), Ogawa et al.
patent: 5338641 (1994-08-01), Pawlowski et al.
patent: 5340682 (1994-08-01), Pawlowski et al.
patent: 5350660 (1994-09-01), Urano et al.
patent: 5424166 (1995-06-01), Pawlowski et al.
patent: 5691100 (1997-11-01), Kudo et al.
patent: 5783354 (1998-07-01), Schwalm et al.
Nakayama Toshimasa
Nitta Kazuyuki
Sakai Yoshika
Sato Kazufumi
Yamazaki Akiyoshi
Chu John S.
Tokyo Ohka Kogyo Co. Ltd.
LandOfFree
Chemical-sensitization photoresist composition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical-sensitization photoresist composition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical-sensitization photoresist composition will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-954294