Chemical-sensitive semiconductor device

Details Chemical-sensitive semiconductor device Chemical-sensitive semiconductor device

1986-07-08

1988-08-16

James, Andrew J.

357 55, H01L 2966

Patent

active

047647973

ABSTRACT:
A chemical-sensitive semiconductor device in the form of a chemical-sensitive field effect transistor, suitable for testing relatively small volumes of a fluid analyte, comprises a substrate provided with a passageway, interconnecting its major surfaces, along which the analyte can pass. Drain and source regions are formed at opposite ends of the passageway and a chemical-sensitive gate region is formed on the sides of the passageway.

REFERENCES:
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patent: 4597002 (1986-06-01), Anthony
patent: 4609932 (1986-09-01), Anthony
patent: 4612465 (1986-09-01), Schutten et al.
patent: 4660063 (1987-04-01), Anthony
Moss, S. D., et al., "Hydrogen, Calcium, and Potassium Ion-Sensitive FET Transducers . . . ", IEEE Trans. on Biomedical Engr., Jan. 1978, pp. 49-54.
A. Sibbald et al., A Miniature Flow-Through Cell With a Four-Function Chemfet Integrated Circuit for Simultaneous Measurements of Potassium, Hydrogen, Calcium and Sodium Ions in Analytica Chimica Acta, vol. 159, 1984, pp. 47-62.
Ching-Chang Wen et al., Gate-Controlled Diodes for Ionic Concentration Measurement in IEEE Transactions on Electron Devices, vol. ED-26, No. 12, Dec. 1979, pp. 1945-1951.

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