Chemical-sensitive field-effect transistor

Details Chemical-sensitive field-effect transistor Chemical-sensitive field-effect transistor

1977-12-02

1979-12-25

Rolinec, Rudolph V.

Electricity: measuring and testing

Determining nonelectric properties by measuring electric...

Erosion

357 23, 357 25, 128635, 204195G, 204195M, G01N 2756, G01N 3104, A61B 505

Patent

active

041807715

ABSTRACT:
The invention relates to an insulated-gate field effect transistor which is adapted for detecting and measuring various chemical properties such as ion activity in a solution. The device has a chemically sensitive layer which overlies a portion of a substrate other than that covered by the gate insulator. When this chemically sensitive layer is exposed to a solution or other substance, the electric field in the substrate is modified which changes the conductance of the channel between a source region and a drain region. The change in conductance is related to the chemical exposure and can be detected with a current meter.

REFERENCES:
patent: 3311756 (1967-04-01), Nagata et al.
patent: 3381432 (1974-08-01), Cox
patent: 3999122 (1976-12-01), Winstel et al.
patent: 4020830 (1977-05-01), Johnson et al.
T-Matsuo et al. "An Integrated Field-Effect Electrode for Biopotential Recording" IEEE Trans. Bio-Med. Eng., vol. BME-21, No. 6 pp. 485-487 Nov. 1974.
P. Bergveld, "Development, Operation and Application of the Ion-Sensitive Field Effect Transistor as a Tool for Electrophysiology" IEEE Trans. Bio-Med Eng. vol BME-19, No. 5, pp. 342-351 Sep., 1972.
Esushi et al. "Integrated Micromulti Ion Sensor Using Field Effect Semiconductor" IEEE Trans. Bio-Med Eng., vol. BME-25 No. 2 (3/1978).

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