Chemical sensing trench field effect transistor

Details Chemical sensing trench field effect transistor Chemical sensing trench field effect transistor

1996-09-30

1998-05-05

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

257252, 257401, 257414, H01L 2358

Patent

active

057478392

ABSTRACT:
A field effect transistor (10) for chemical sensing by measuring a change in a surface potential of a gate electrode (48) due to exposure to a fluid has a semiconductor substrate (12) with a trench (18, 20). The trench has a first sidewall (30) and a second sidewall (32) disposed opposite the first sidewall to provide a fluid gap (50) for the fluid to be sensed. The gate electrode is disposed overlying the first sidewall of the trench, and a source region (54) and a drain region (56) are disposed in the second sidewall of the trench. A channel region (52) is disposed between the source and drain regions, and the gate electrode is disposed opposite the first channel region across the fluid gap. A heater (26) for regulating the temperature of the gate electrode is disposed in the first sidewall of the trench.

REFERENCES:
patent: 4764797 (1988-08-01), Shaw et al.
patent: 4874499 (1989-10-01), Smith et al.
patent: 4961833 (1990-10-01), Sakai et al.
patent: 5414284 (1995-05-01), Baxter et al.
patent: 5576563 (1996-11-01), Chung

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