Chemical rinse composition

Details Chemical rinse composition Chemical rinse composition

2006-06-20

2006-06-20

Le, Hoa Van (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Stripping process or element

C430S257000, C430S258000, C430S260000, C430S261000, C430S262000, C430S263000, C430S331000, C510S175000

Reexamination Certificate

active

07063930

ABSTRACT:
The present invention relates to a thinner composition for removing resist used in TFT-LCD manufacturing processes, and more particularly to a thinner composition for removing resist that comprises: a) 0.1 to 5 wt % of an inorganic alkali compound; b) 0.1 to 5 wt % of an organic amine; c) 0.1 to 30 wt % of an organic solvent; d) 0.01 to 5 wt % of a surfactant comprising an ionic surfactant and a non-ionic surfactant in the weight ration of 1:5 to 1:25; and e) 60 to 99 wt % of water. The thinner composition for removing resist of the present invention has good efficiency of removing unwanted resist film constituents formed on the edge of the resist film or at the back of the substrate in TFT-LCD device and semiconductor device manufacturing processes. Also, it does not have the problem of equipment corrosion.

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PCT International Search Report; International application No. PCT/KR02/02117; International filing date: Nov. 13, 2002; Date of Mailing: Mar. 13, 2003.

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