Chemical probe field effect transistor for measuring the surface

Details Chemical probe field effect transistor for measuring the surface Chemical probe field effect transistor for measuring the surface

1995-04-24

1996-11-19

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

257467, 257469, H01L 2358, H01L 31058

Patent

active

055765637

ABSTRACT:
A chemical probe field effect transistor (10) for measuring surface potential as a function of temperature and used for chemical sensing. Source and drain regions (14, 16) in a semiconductor substrate (12) define a channel region (34). A gate insulating layer (18) covers the channel region, and a gate electrode layer (20) is disposed above the gate insulating layer to provide a gap (22) between the gate insulating layer and the gate electrode layer. This gap permits a fluid to contact an exposed surface (28) of the gate electrode layer. A heating layer (30) is disposed overlying the gate electrode layer to regulate its temperature. The surface potential of the gate electrode layer changes in response to the presence of certain chemicals in the contacting fluid.

REFERENCES:
patent: 4411741 (1983-10-01), Janata
Alvi et al, Solid State Elec vol. 31 No. 1, pp. 45-48 .COPYRGT.1988.
Muller et al, Device Electronics for IC's, pp. 443, 470, 471 .COPYRGT.1986.

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