Chemical method for the modification of a substrate surface to a

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437119, 437964, 437965, 437126, H01L 2120, H01L 21265, H01L 21324, H01L 2184

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053106962

ABSTRACT:
A chemical method for the modification of a substrate surface by compound formation to accomplish heteroepitaxial crystal growth is provided. This method enables the growth of semiconductors on insulators allowing fabrication of three dimensionally integrated devices. Devices include vertical FET's for DRAM storage cells, integrated diode laser/FET's, integrated detector/FET's, and common gate CMOS inverters.

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