Abrading – Precision device or process - or with condition responsive... – Computer controlled
Reexamination Certificate
2006-10-17
2006-10-17
Rachuba, M. (Department: 3723)
Abrading
Precision device or process - or with condition responsive...
Computer controlled
C451S056000, C451S213000, C451S218000, C451S221000, C451S443000, C451S041000
Reexamination Certificate
active
07121919
ABSTRACT:
Chemical mechanical polishing (CMP) systems and methods are provided herein. One aspect of the present subject matter is a polishing system. One polishing system embodiment includes a platen adapted to receive a wafer, and a polishing pad drum that has a cylindrical, or generally cylindrical, shape with a length and an axis of rotation along the length. The polishing pad drum is adapted to rotate about the axis of rotation along the drum length. The polishing pad drum, the platen, or both the polishing pad drum and the platen are adapted to be linearly moved to polish the surface of the wafer using the rotating polishing pad drum. The polishing pad drum and the platen are adapted to be operably positioned a predetermined minimum distance from each other as the polishing pad drum and the platen pass each other due the linear motion.
REFERENCES:
patent: 3233369 (1966-02-01), Highberg
patent: 3943666 (1976-03-01), Dion et al.
patent: 4476601 (1984-10-01), Oka
patent: 4486826 (1984-12-01), Wolff et al.
patent: 4656790 (1987-04-01), Mukai et al.
patent: 5390132 (1995-02-01), Shioe et al.
patent: 5483568 (1996-01-01), Yano et al.
patent: 5707272 (1998-01-01), Hashimoto et al.
patent: 5707274 (1998-01-01), Kim et al.
patent: 5733175 (1998-03-01), Leach
patent: 5827115 (1998-10-01), Shimizu
patent: 5934980 (1999-08-01), Koos et al.
patent: 5958794 (1999-09-01), Bruxvoort et al.
patent: 5964652 (1999-10-01), Melzner et al.
patent: 6059649 (2000-05-01), Ballard
patent: 6093085 (2000-07-01), Yellitz et al.
patent: 6093087 (2000-07-01), Hakomori et al.
patent: 6103628 (2000-08-01), Talieh
patent: 6126523 (2000-10-01), Moriyasu et al.
patent: 6139409 (2000-10-01), Inaba
patent: 6143123 (2000-11-01), Robinson et al.
patent: 6152805 (2000-11-01), Takahashi
patent: 6165056 (2000-12-01), Hayashi et al.
patent: 6168684 (2001-01-01), Mitsuhashi et al.
patent: 6171513 (2001-01-01), Davis
patent: 6203414 (2001-03-01), Numoto et al.
patent: 6207572 (2001-03-01), Talich
patent: 6210525 (2001-04-01), James et al.
patent: 6213852 (2001-04-01), Fujii et al.
patent: 6213853 (2001-04-01), Gonzalez-Martin et al.
patent: 6217427 (2001-04-01), Case et al.
patent: 6358128 (2002-03-01), Sakurai et al.
patent: 6419443 (2002-07-01), Takenoshita et al.
patent: 61-152367 (1986-07-01), None
Anonymous, “Improved Metallurgy for Wiring Very Large Scale Integrated Circuits”,International Technology Disclusures, 4(9), (1986), 1 page.
Braud, F.., “Ultra Thin Diffusion Barriers for Cu Interconnections at The Gigabit Generation and Beyond”,VMIC Conference Proceedings, (1996),pp. 174-179.
Ding,“Copper Barrier, Seed Layer and Planerization Technologies”,VMIC Conference Proceedings, (1997),pp. 87-92.
Iijima, T..,“Microstructure and Electrical Properties of Amorphous W-Si-N Barrier Layer for Cu Interconnections”,1996 VMIC Conference, (1996),pp. 168-173.
Laursen, T.., “Encapsulation of Copper by Nitridation of Cu-Ti Alloy/Bilayer Structures”,International Conference on Metallurgical Coatings and Thin Films, Abstract No. H1.03, San Diego, CA,(Apr. 1997), p. 309.
Marcadal, C.., “OMCVD Copper Process for Dual Damascene Metallization”,VMIC Conference, ISMIC,(1997),pp. 93-97.
RYU, C..,et al. ,“Barriers for copper interconnections”,Solid State Technology, (1999),pp. 53, 54, 56.
Wrschka, P.., et al. ,“Chemical Mechanical Planarization of Copper Damascene Structures”,Journal of the Electrochemical Society, 147(2), (2000),pp. 706-712.
Micro)n Technology, Inc.
Rachuba M.
Schwegman Lundberg Woessner & Kluth P.A.
LandOfFree
Chemical mechanical polishing system and process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical mechanical polishing system and process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical mechanical polishing system and process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3661816