Chemical mechanical polishing slurry useful for copper/tantalum

Details Chemical mechanical polishing slurry useful for copper/tantalum Chemical mechanical polishing slurry useful for copper/tantalum

1998-06-26

2000-05-16

Powell, William

Compositions

Etching or brightening compositions

Inorganic acid containing

216 89, 438693, H01L 2100

Patent

active

060633069

ABSTRACT:
The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

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