Chemical mechanical polishing slurry useful for copper substrate

Details Chemical mechanical polishing slurry useful for copper substrate Chemical mechanical polishing slurry useful for copper substrate

1997-07-11

2000-10-03

Powell, William

Compositions

Etching or brightening compositions

252 794, H01L 21302

Patent

active

061268534

ABSTRACT:
A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

REFERENCES:
patent: 3296141 (1967-01-01), Lieb
patent: 3385682 (1968-05-01), Lowen
patent: 3668131 (1972-06-01), Banush et al.
patent: 4086176 (1978-04-01), Ericson
patent: 4671851 (1987-06-01), Beyer et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4910155 (1990-03-01), Cote et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 4956313 (1990-09-01), Cote et al.
patent: 5137544 (1992-08-01), Medellin
patent: 5157876 (1992-10-01), Medellin
patent: 5209816 (1993-05-01), Yu et al.
patent: 5244523 (1993-09-01), Tollini
patent: 5340370 (1994-08-01), Cadien et al.
patent: 5354490 (1994-10-01), Yu et al.
patent: 5391258 (1995-02-01), Brancaleoni et al.
patent: 5476606 (1995-12-01), Brancaleoni et al.
patent: 5527423 (1996-06-01), Neville et al.
patent: 5575837 (1996-11-01), Kodama et al.
Carpio et al., Journal: TSF (Thin Solid Films), Article: 6649, Initial Study on Copper CMP Slurry Chemistries (1995).
Hirabayashi et al., Feb. 22-23, 1996 CMP-MIC Conference--96ISMIc--100P, pp. 119-123, Chemical Mechanical Polishing of Copper Using a Slurry Composed of Glycine and Hydrogen Peroxide (1996).
Luo et al., Feb. 22-23, 1996 CMP-MIC Conference--96ISMIC--100P, pp. 145-151, Chemical-Mechanical Polishing of Copper In Acid Media (1996).
Steogerwald et al. J. Electrom. Soc., vol. 142, No. 7, pp. 2379-2385, Electrochemical Potential Measurements During the Chemical-Mechanical Polishing of Copper Thin Films (1995).

Affiliated with

Also associated with

Rating

Chemical mechanical polishing slurry useful for copper substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical mechanical polishing slurry useful for copper substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical mechanical polishing slurry useful for copper substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-191726