Chemical-mechanical polishing slurry formulation and method for

Abrasive tool making process – material – or composition – With inorganic material

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106 3, 51308, 51309, 438693, H01L 213105, H01L 21306

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active

059168552

ABSTRACT:
A polishing slurry composition and its method of making for planarization of silicon semiconductor wafers by chemical mechanical polishing of the wafer. A slurry formulation utilizing a ferric salt tungsten oxidizer, an ammonium persulfate titanium oxidizer, a fatty acid suspension agent, alumina particles with a small diameter and tight diameter range, coated with a solubility coating, and a chemical stabilizer, provides high tungsten and titanium polish rates with high selectivity to silicon dioxide, and good oxide defectivity for use in tungsten local interconnect applications. A method for making a tungsten slurry includes first thoroughly blending small diameter alumina particles with a tight diameter range in an aqueous concentrate with a suspension agent, then mixing with water and oxidizers. Ferric salt tungsten slurries made by this method provide excellent tungsten polish characteristics for via plug and local interconnect applications.

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Consumables for CMP of Dielectrics and Conductor, Rahul Jairath, et al., Mat. Res. Soc. Symp. Proc., vol. 337, pp. 121-131, San Francisco, CA, Apr. 4-8, 1994.

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