Chemical mechanical polishing slurry for metallic thin film

Details Chemical mechanical polishing slurry for metallic thin film Chemical mechanical polishing slurry for metallic thin film

1997-05-16

1999-07-13

Jones, Deborah

Abrasive tool making process, material, or composition

With hydrocarbon

51309, 252 791, B24D 334

Patent

active

059220910

ABSTRACT:
This invention provides metallic thin film chemical mechanical polishing slurry compositions having improved suspension stability. The slurry contains 2.5-10% by weight of alumina powder and 2-20% by volume of phosphoric acid (80% concentration ) solution, and using potassium hydroxide to adjust its pH to 1-6 so as to increase suspension ability of the alumina powder in the aqueous slurry. The polishing slurry compositions can further combine with suitable oxidizers such as hydrogen peroxide, ferric nitrate and so on to be appropriately used for chemical mechanical polishing metallic thin film in the process of manufacturing semiconductor in order to control abrasion rate and unevenness more easily.

REFERENCES:
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patent: 5389194 (1995-02-01), Rostoker et al.
patent: 5391258 (1995-02-01), Brancaleoni et al.
patent: 5476606 (1995-12-01), Brancaleoni et al.
patent: 5756398 (1998-05-01), Wang et al.
patent: 5800577 (1998-09-01), Kido

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