Chemical mechanical polishing slurry for metal layers and films

Details Chemical mechanical polishing slurry for metal layers and films Chemical mechanical polishing slurry for metal layers and films

1996-05-10

1999-01-12

Dang, Thi

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

252 792, 252 794, C09K 1300, H01L 2100

Patent

active

058588132

ABSTRACT:
A polishing slurry for chemically mechanically polishing metal layers and films during the various stages of multilevel interconnect fabrication associated with integrated circuit manufacturing. The slurry includes an aqueous medium, an abrasive, an oxidizing agent, and an organic acid. The polishing slurry has been found to significantly lower or inhibit the silicon dioxide polishing rate, thus yielding enhanced selectivity. In addition, the polishing slurry is useful in providing effective polishing to metal layers at desired polishing rates while minimizing surface imperfections and defects.
Also disclosed is a method for producing coplanar metal/insulator films on a substrate utilizing the slurry of the present invention and chemical mechanical polishing technique relating thereto.

REFERENCES:
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patent: 5476606 (1995-12-01), Brancaleoni et al.
patent: 5525191 (1996-06-01), Maniar et al.
patent: 5527423 (1996-06-01), Neville et al.
patent: 5575885 (1996-11-01), Hirabayashi et al.
patent: 5614444 (1997-03-01), Farkas et al.
Acherman, et al., U.S. Dept. of the Interior, Bureau of Mines, pp. 1-59, Corrosion Properties of Molybdenum, Tungsten, Vanadium, and Some Vanadium Alloys (1966).

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