Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-03-06
2007-03-06
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S959000, C051S298000, C051S307000, C501S127000, C216S052000, C106S003000
Reexamination Certificate
active
10369647
ABSTRACT:
A chemical mechanical polishing slurry contains an alumina powder including α-alumina particles and at least one other alumina particles having a crystal structure different from that of α-alumina, and resin particles.
REFERENCES:
patent: 5523074 (1996-06-01), Takahashi et al.
patent: 5527423 (1996-06-01), Neville et al.
patent: 5607718 (1997-03-01), Sasaki et al.
patent: 5693239 (1997-12-01), Wang et al.
patent: 5775980 (1998-07-01), Sasaki et al.
patent: 5776214 (1998-07-01), Wood
patent: 6139763 (2000-10-01), Ina et al.
patent: 6238450 (2001-05-01), Garg et al.
patent: 6251150 (2001-06-01), Small et al.
patent: 6258137 (2001-07-01), Garg et al.
patent: 6277161 (2001-08-01), Castro et al.
patent: 6375545 (2002-04-01), Yano et al.
patent: 6436811 (2002-08-01), Wake et al.
patent: 6440187 (2002-08-01), Kasai et al.
patent: 6454819 (2002-09-01), Yano et al.
patent: 6478834 (2002-11-01), Tsuchiya et al.
patent: 6576554 (2003-06-01), Matsui et al.
patent: 7067105 (2006-06-01), Kogoi et al.
patent: 2001/0055558 (2001-12-01), Kogoi et al.
patent: 2003/0064020 (2003-04-01), Kogoi et al.
patent: 2003/0165412 (2003-09-01), Matsui et al.
patent: 2004/0065021 (2004-04-01), Yoneda et al.
patent: 2004/0115944 (2004-06-01), Matsui
patent: 2005/0090104 (2005-04-01), Yang et al.
patent: 2005/0132658 (2005-06-01), Celikkaya et al.
patent: 2005/0137076 (2005-06-01), Rosenflanz et al.
patent: 2005/0137077 (2005-06-01), Bange et al.
patent: 2006/0210799 (2006-09-01), Maki et al.
patent: 1 020 501 (2000-07-01), None
patent: 1 036 836 (2000-09-01), None
patent: 11-511394 (1999-10-01), None
patent: 2000-204352 (2000-07-01), None
patent: 2000-204353 (2000-07-01), None
patent: 2000-269169 (2000-09-01), None
patent: 2000-269170 (2000-09-01), None
patent: 2001-15462 (2001-01-01), None
patent: 2001-152135 (2001-06-01), None
patent: 2002-30271 (2002-01-01), None
patent: 2004-143429 (2004-05-01), None
Matsui et al (JP 200-269169) (cited on IDS) (Translation).
Hiroyuki Yano, et al. “High-Performance CMP Slurry with Inorganic/Resin Abrasive for AL/Low K Damascene,” Mat. Res. Soc. Symp. Proc., vol. 671, 2001, Materials Research Society.
Yukiteru Matsui, et al. “A Novel CMP Slurry with Inorganic/Resin Abrasive for AL Damascene Process,” Advanced Metallization Conf. 2001, Conference Proceedings ULSI XVII, 2002, Materials Research Society, p. 693.
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Wilczewski M.
LandOfFree
Chemical mechanical polishing slurry and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical mechanical polishing slurry and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical mechanical polishing slurry and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3797573